SEMICONDUCTOR IMAGE SENSOR

PROBLEM TO BE SOLVED: To provide an image sensor.SOLUTION: An image sensor 10 is provided with an image detection element including an N-type continuity region 26 and a P-type pin-type layer 37. In the two regions, two PN junction parts are formed at different depths, thus improving the efficiency f...

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Bibliographische Detailangaben
Hauptverfasser:	MARK S SWENSON, PATTERSON JENNIFER J, DROWLEY CLIFFORD I, RAMASWAMI SHRINATH
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an image sensor.SOLUTION: An image sensor 10 is provided with an image detection element including an N-type continuity region 26 and a P-type pin-type layer 37. In the two regions, two PN junction parts are formed at different depths, thus improving the efficiency for capturing charged carriers at different light frequencies. The continuity region 26 is formed by an angled injection so that it partially functions as the source of a MOS transistor 32.