METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND PROGRAM

PROBLEM TO BE SOLVED: To form a thin film, such as a silicon film, containing a predetermined element in a low temperature region.SOLUTION: A thin film formed with a predetermined element, is formed on a substrate by performing a cycle of steps a predetermined number of times, the cycle including: a...

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Bibliographische Detailangaben
Hauptverfasser:	HIGASHINO KEIKO, MIZUNO KANEKAZU, YANAGIDA KAZUTAKA, HIROSE YOSHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To form a thin film, such as a silicon film, containing a predetermined element in a low temperature region.SOLUTION: A thin film formed with a predetermined element, is formed on a substrate by performing a cycle of steps a predetermined number of times, the cycle including: a step of supplying a first raw material including predetermined elements and halogen group to a substrate; and a step of supplying a second raw material including predetermined element and amino group, having two or less ligands which includes amino group in its composition formula and in which its number of is less than that of ligand including halogen group in a composition formula of the first raw material.