PLASMA ETCHING DEVICE

PROBLEM TO BE SOLVED: To prevent a junction layer from being consumed.SOLUTION: In one example embodiment, a plasma etching device according to a first embodiment includes: a base 10; an electrostatic chuck 9 which is provided on a placement surface of the base 10 and on which a workpiece is placed;...

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Bibliographische Detailangaben
1. Verfasser:	AOTO MASA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To prevent a junction layer from being consumed.SOLUTION: In one example embodiment, a plasma etching device according to a first embodiment includes: a base 10; an electrostatic chuck 9 which is provided on a placement surface of the base 10 and on which a workpiece is placed; a junction layer 20 which joins the base 10 and the electrostatic chuck 9; a heater provided in the electrostatic chuck 9; a through-hole 16 which is formed penetrating the electrostatic chuck 9, the junction layer 20 and the base 10; an elastic member 110 which is provided so as to cover the base 10 and the exposed surface of the junction layer 20 in the through-hole 16 and comes into contact with the lower part of the electrostatic chuck 9; and an energization member 120 which applies a pressing force from the base 10 side to the electrostatic chuck 9 side to the elastic member 110.