PLASMA ETCHING DEVICE

PROBLEM TO BE SOLVED: To prevent peeling of a bonding layer.SOLUTION: In one embodiment example, a plasma etching device comprises: a base formed of a metal indicating an expansion coefficient lower than aluminum; an electrostatic chuck which is disposed on a mounting surface of the base and in whic...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HAYASHI DAISUKE, AOTO MASA
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To prevent peeling of a bonding layer.SOLUTION: In one embodiment example, a plasma etching device comprises: a base formed of a metal indicating an expansion coefficient lower than aluminum; an electrostatic chuck which is disposed on a mounting surface of the base and in which a workpiece is mounted; a bonding layer which bonds the base and the electrostatic chuck; and a heater provided in the electrostatic chuck. In one embodiment example, the base in the plasma etching device also includes a metal part formed by cold spraying using a metal having higher thermal conductivity than a metal which forms the base.