METHOD FOR PRODUCING SILICON SINGLE CRYSTAL

METHOD FOR PRODUCING SILICON SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a GFZ method.SOLUTION: The present invention relates to a method for producing a silicon single crystal that comprises the steps of: heating a silicon plate by induction heating; melting granular silicon on the silicon plate; supplying the molten silicon to a phase b...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LOBMEYER JOSEF, GEORG BRENNINGER, WALDEMAR STEIN
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a GFZ method.SOLUTION: The present invention relates to a method for producing a silicon single crystal that comprises the steps of: heating a silicon plate by induction heating; melting granular silicon on the silicon plate; supplying the molten silicon to a phase boundary where a crystallization of the single crystal takes place through a flow conduit tube at the center of the plate; heating a silicon ring arranged above the plate having lower resistance than the plate by induction heating prior to the step for heating the plate by induction heating; and melting the ring.