POLISHING TOOL TO BE USED AS CHEMICAL MACHINE FLATTENING PAD CONDITIONER

PROBLEM TO BE SOLVED: To provide a polishing tool, a forming method of the polishing tool and a dressing method of a CMP pad, particularly suitable for conditioning for maintaining a polishing surface of the CMP pad in a desired state.SOLUTION: A polishing article 200 includes a substrate 201 having...

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Bibliographische Detailangaben
Hauptverfasser:	CHARLES DINH-NGOC, HWANG TAEWOOK, RAMANUJAM VEDANTHAM, RAMANATH SRINIVASAN, THOMAS PUTHANANGADY, SCHULZ ERIC M, WU JIANHUI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TOOLS FOR GRINDING, BUFFING, OR SHARPENING TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a polishing tool, a forming method of the polishing tool and a dressing method of a CMP pad, particularly suitable for conditioning for maintaining a polishing surface of the CMP pad in a desired state.SOLUTION: A polishing article 200 includes a substrate 201 having a first main surface 202 and a second surface 204 opposed to the first main surface 202, and the first main surface 202 and the second main surface 204 are joined by a side surface 206. A first adhesive layer 203 covers the first main surface 202, and abuts on it, and also includes a first abrasive grain layer 221 so that an abrasive grain is fixed to the substrate 201. A second abrasive grain layer 223 is included in an adhesive layer 205 installed on the second main surface 204 of the substrate 201 and abutting on it. The polishing article 200 includes a joint structure for removably joining the substrate 201 to a plate during a conditioning work of the CMP pad, in the side surface 206 as recesses 207 and 208 extending in the lateral direction on the inside of the substrate 201.