SAPPHIRE SUBSTRATE AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a sapphire substrate having a large diameter of 4 inch or more, in which the degree of undulation can be reduced and manufacturing method therefor.SOLUTION: One side of a substrate having undulation is subjected to undulation reduction processing for reducing the deg...

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Bibliographische Detailangaben
1. Verfasser:	YOSHII MOTOYASU
Format:	Patent
Sprache:	eng
Schlagworte:	ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a sapphire substrate having a large diameter of 4 inch or more, in which the degree of undulation can be reduced and manufacturing method therefor.SOLUTION: One side of a substrate having undulation is subjected to undulation reduction processing for reducing the degree of undulation until the one side becomes convex, and then at least the surface of the substrate subjected to undulation reduction processing is ground or polished while fixing the substrate to a substrate holding member.