MANUFACTURING METHOD FOR NITRIDE SEMICONDUCTOR CRYSTAL

PROBLEM TO BE SOLVED: To provide a method for manufacturing an excellent nitride crystal while preventing the deposition of a polycrystalline substance in the case where a non-polar surface or a semi-polar surface is a growing principal surface.SOLUTION: In the method, a nitride semiconductor crysta...

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Bibliographische Detailangaben
Hauptverfasser:	KUBO SHUICHI, OHATA TATSUHIRO, ENATSU YUKI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for manufacturing an excellent nitride crystal while preventing the deposition of a polycrystalline substance in the case where a non-polar surface or a semi-polar surface is a growing principal surface.SOLUTION: In the method, a nitride semiconductor crystal is made to grow on a seed crystal 110, in which a non-polar surface or a semi-polar surface is a principal surface. The seed crystal 110 is attached through an underlay substrate 109 to a susceptor 107. The outer edge of the lower substrate 109 is arranged on the inner side than the outer edges of the seed crystal 110 and the susceptor 107. The distance R between the seed crystal 110 and the susceptor 107 is 1 to 9 mm.