SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which forms junction of a source electrode layer and a drain electrode layer with an oxide semiconductor layer as ohmic junction.SOLUTION: A semiconductor device manufacturing method comprises: a process of performing a hea...

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Bibliographische Detailangaben
Hauptverfasser:	KISHIDA HIDEYUKI, IMAFUJI TOSHIKAZU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which forms junction of a source electrode layer and a drain electrode layer with an oxide semiconductor layer as ohmic junction.SOLUTION: A semiconductor device manufacturing method comprises: a process of performing a heat treatment on an oxide semiconductor film; and forming between an oxide semiconductor film and a source electrode layer, after the process of heat treatment, a first region having an oxygen concentration lower than that of the oxide semiconductor film, and forming between the oxide semiconductor film and a drain electrode layer, a second region having an oxygen concentration lower than that of the oxide semiconductor film. Since each of the first region and the second region has a lower oxygen concentration than that of the oxide semiconductor film, resistance is low and ohmic junction can be formed.