PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

PROBLEM TO BE SOLVED: To provide a plasma processing apparatus having a high-frequency power supply supplying a time-modulated high-frequency power that can be controlled in a wide range and with high accuracy, and to provide a plasma processing method using the plasma processing apparatus.SOLUTION:...

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Bibliographische Detailangaben
Hauptverfasser:	OGOSHI YASUO, OHIRAHARA YUZO, ONO TETSUO, MORIMOTO MICHIKAZU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a plasma processing apparatus having a high-frequency power supply supplying a time-modulated high-frequency power that can be controlled in a wide range and with high accuracy, and to provide a plasma processing method using the plasma processing apparatus.SOLUTION: A plasma processing apparatus comprises: a vacuum container; a first high-frequency power supply for generating a plasma in the vacuum container; a sample table arranged in the vacuum container and provided for mounting a sample; and a second high-frequency power supply supplying a high-frequency power to the sample table. In the plasma processing apparatus, at least any one of the first high-frequency power supply and the second high-frequency power supply supplies a time-modulated high-frequency power, and one of parameters for controlling the time modulation has two or more different control ranges, and one of the control ranges is provided for performing high accuracy control.