METHOD OF ETCHING EXTREME ULTRAVIOLET LIGHT (EUV) PHOTOMASKS

PROBLEM TO BE SOLVED: To provide embodiments of a method of etching EUV photomasks.SOLUTION: In one embodiment, a method of etching an extreme ultraviolet photomask includes: a step of providing a photomask comprising, in order, a substrate, a multi-material layer, a capping layer, and a multi-layer...

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Bibliographische Detailangaben
Hauptverfasser:	WU BANQIU, KUMAR AJAY, CHANDRACHOOD MADHAVI R
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS THEREFOR MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide embodiments of a method of etching EUV photomasks.SOLUTION: In one embodiment, a method of etching an extreme ultraviolet photomask includes: a step of providing a photomask comprising, in order, a substrate, a multi-material layer, a capping layer, and a multi-layer absorber layer, in which the multilayer absorber layer comprises a self-mask layer disposed over a bulk absorber layer, the self-mask layer comprises tantalum and oxygen, and the bulk absorber layer comprises tantalum and essentially no oxygen; a step of etching the self-mask layer using a first etch process; and a step of etching the bulk absorber layer using a second etch process different than the first etch process, in which the etch rate of the bulk absorber layer is greater than the etch rate of the self-mask layer during the second etch process.