METHOD FOR TRANSFERRING InP FILM ON HARDENING SUBSTRATE

PROBLEM TO BE SOLVED: To provide a method capable of sufficiently dividing a substrate activated by heat.SOLUTION: A method for transferring an InP film 11 on a hardening substrate 9 includes: a step (a) of providing a structure 6 having a surface layer 5 made of InP, and a thin layer 4 provided bel...

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Bibliographische Detailangaben
1. Verfasser: AURELIE TAUZIN
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method capable of sufficiently dividing a substrate activated by heat.SOLUTION: A method for transferring an InP film 11 on a hardening substrate 9 includes: a step (a) of providing a structure 6 having a surface layer 5 made of InP, and a thin layer 4 provided below the surface layer 5 and made of doped InP; a step (b) of implanting hydrogen ions through the surface layer 5 and defining a range of the InP film 11 having the surface layer 5 for creating a fragile flat plane 7 in the thin layer 4; a step (c) of arranging the surface layer 5 in close contact with the hardening substrate 9; and a step (d) of applying heat-treatment for dividing the fragile plane 7 and transferring the InP film 11 on the hardening substrate 9.