PLASMA-INDUCED CVD METHOD

PROBLEM TO BE SOLVED: To reduce a time period required for a seasoning process when a silicon compound is deposited in a remote plasma-induced CVD method to improve productivity.SOLUTION: In a seasoning process of a remote plasma-induced CVD method in which a vacuum vessel is separated into a plasma...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SOMEYA RYO, WATANABE EISAKU, OGATA TETSUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To reduce a time period required for a seasoning process when a silicon compound is deposited in a remote plasma-induced CVD method to improve productivity.SOLUTION: In a seasoning process of a remote plasma-induced CVD method in which a vacuum vessel is separated into a plasma generation space and a substrate processing space with a partition wall, while in general a material gas is flowed in the plasma generation space and a silicon containing gas is flowed in the substrate processing space, by flowing in both material gas and silicon containing gas into the plasma generation space, a time period required for the seasoning process can be significantly reduced.