METHOD OF MANUFACTURING EPITAXIAL SILICON WAFER AND EPITAXIAL SILICON WAFER
PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial silicon wafer having high planarity in the peripheral part, and to provide an epitaxial silicon wafer obtained by that method.SOLUTION: In the method of manufacturing an epitaxial silicon wafer, an epitaxial layer 3 is formed on...
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| creator | MASUDA SUMIHISA NARAHARA KAZUHIRO |
| description | PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial silicon wafer having high planarity in the peripheral part, and to provide an epitaxial silicon wafer obtained by that method.SOLUTION: In the method of manufacturing an epitaxial silicon wafer, an epitaxial layer 3 is formed on the front surface 23 of a silicon wafer 2, where the plane direction of the front surface 23 is (100) plane or (110) plane, and the chamfer width A1 at an end on the front surface 23 side is 200 μm or less. |
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| language | eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD OF MANUFACTURING EPITAXIAL SILICON WAFER AND EPITAXIAL SILICON WAFER |
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