METHOD OF MANUFACTURING EPITAXIAL SILICON WAFER AND EPITAXIAL SILICON WAFER

METHOD OF MANUFACTURING EPITAXIAL SILICON WAFER AND EPITAXIAL SILICON WAFER

PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial silicon wafer having high planarity in the peripheral part, and to provide an epitaxial silicon wafer obtained by that method.SOLUTION: In the method of manufacturing an epitaxial silicon wafer, an epitaxial layer 3 is formed on...

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Bibliographische Detailangaben
Hauptverfasser: MASUDA SUMIHISA, NARAHARA KAZUHIRO
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial silicon wafer having high planarity in the peripheral part, and to provide an epitaxial silicon wafer obtained by that method.SOLUTION: In the method of manufacturing an epitaxial silicon wafer, an epitaxial layer 3 is formed on the front surface 23 of a silicon wafer 2, where the plane direction of the front surface 23 is (100) plane or (110) plane, and the chamfer width A1 at an end on the front surface 23 side is 200 μm or less.