PLASMA PROCESSING APPARATUS, AND HIGH-FREQUENCY WAVE GENERATOR

PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of more stably generating a plasma in a wide region ranging from a low power to a high power, and that enables construction of wide process conditions.SOLUTION: A plasma processing apparatus comprises: a processing container in w...

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Bibliographische Detailangaben
Hauptverfasser: FUNASAKI KAZUNORI, KANEKO KAZUFUMI, KATO HIDEO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of more stably generating a plasma in a wide region ranging from a low power to a high power, and that enables construction of wide process conditions.SOLUTION: A plasma processing apparatus comprises: a processing container in which a process by a plasma is performed; and a plasma generation mechanism including a high-frequency wave generator arranged outside the processing container and generating a high-frequency wave, and generating a plasma in the processing container by using the high-frequency wave generated by the high-frequency generator. The high-frequency generator comprises: a high-frequency wave oscillator oscillating the high-frequency wave; a power supply part supplying a power to the high-frequency wave oscillator; a waveguide propagating the high-frequency wave oscillated by the high-frequency wave oscillator to the processing container side that is a load side; and a voltage standing wave ratio variable mechanism (61) changing a voltage standing wave ratio of a voltage standing wave formed in the waveguide by the high-frequency wave, depending on the power supplied from the power supply part.