SEMICONDUCTOR MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor memory element capable of improving electrical characteristics while reducing the physical size.SOLUTION: A gate stack 20 provided on a substrate 100 has mold insulating films 110 and gates 160 that are alternately stacked, and forms a channel hole 102 exposing an epitaxial film 130 formed on a top surface 100s of the substrate 100 to the outside. In the channel hole 102, a vertical channel 150 electrically connecting the substrate 100 and a bit line, and a gate insulating film stack 140 holding data by the voltage difference between the gate 160 and the vertical channel 150 are formed. A top surface 130s of the epitaxial film 130 is formed on the same plane as the top surface 100s of the substrate 100. For this reason, a current path P is formed between a common source 108s and the vertical channel 150, thereby improving the electrical characteristics of the semiconductor memory element.