CARBON FILM DEPOSITION METHOD AND DEPOSITION DEVICE

PROBLEM TO BE SOLVED: To provide a carbon film deposition method excellent in step coverage and capable of depositing a carbon film at a temperature lower than the conventional thermal CVD method.SOLUTION: A carbon film deposition method comprises the steps of: carrying a processed substrate in which the carbon film is deposited into a processing chamber of a deposition device (step 1); and depositing the carbon film on the processed substrate by thermally decomposing a hydrocarbon-system carbon source gas in the processing chamber (step 2). The step 2 sets a temperature less than a thermal decomposition temperature in a state in which a plasma assist of a hydrocarbon-system carbon source gas unit does not exist as a deposition temperature of the carbon film, introduces the hydrocarbon-system carbon source gas and a thermal decomposition temperature drop gas containing a halogen element into the processing chamber, and deposits the carbon film in a non-plasma thermal CVD method.