SEMICONDUCTOR DEVICE AND METHOD FOR REDUCED BIAS TEMPERATURE INSTABILITY (BTI) IN SILICON CARBIDE DEVICES

SEMICONDUCTOR DEVICE AND METHOD FOR REDUCED BIAS TEMPERATURE INSTABILITY (BTI) IN SILICON CARBIDE DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device and method for reduced bias temperature instability (BTI) in silicon carbide devices.SOLUTION: A system includes a silicon carbide (SiC) semiconductor device 100 and a hermetically sealed packaging 130 enclosing the SiC semiconductor device. Th...

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Bibliographische Detailangaben
Hauptverfasser: MICHAEL JOSEPH DARRYL, ARTHUR STEPHEN D
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor device and method for reduced bias temperature instability (BTI) in silicon carbide devices.SOLUTION: A system includes a silicon carbide (SiC) semiconductor device 100 and a hermetically sealed packaging 130 enclosing the SiC semiconductor device. The hermetically sealed packaging 130 is configured to maintain a particular atmosphere 132 near the SiC semiconductor device 100. Further, the particular atmosphere 132 limits a shift in a threshold voltage of the SiC semiconductor device 100 to less than 1 V during operation.