POLYIMIDE FILM AND COPPER-CLAD LAMINATE HAVING THE SAME AS SUBSTRATE

PROBLEM TO BE SOLVED: To provide a polyimide film that is excellent in dimensional stability, and that is suitable to a substrate of a fine pitch circuit, especially to a COF(Chip on Film) in which wiring is performed in a film width direction by a narrow pitch; and a copper-clad laminate having the...

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Bibliographische Detailangaben
Hauptverfasser:	TESHIBA TOSHIHIRO, SAWAZAKI KOICHI, KOKUNI MASAHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMISTRY COMPOSITIONS BASED THEREON ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL PROCESSES OF COMPOUNDING LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PERFORMING OPERATIONS PRINTED CIRCUITS THEIR PREPARATION OR CHEMICAL WORKING-UP TRANSPORTING WORKING-UP
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a polyimide film that is excellent in dimensional stability, and that is suitable to a substrate of a fine pitch circuit, especially to a COF(Chip on Film) in which wiring is performed in a film width direction by a narrow pitch; and a copper-clad laminate having the same as a substrate.SOLUTION: A polyimide film is characterized in that a coefficient of thermal expansion αMD in a machine transportation direction (MD) of the film is 3-10 ppm/°C, and a coefficient of thermal expansion αTD in a crosswise direction (TD) of the film is 10-20 ppm/°C, and moreover a copper-clad laminate is characterized in that the polyimide film is included as a substrate, and a copper having a thickness of 1-10 μm is formed on the polymide film.