NONVOLATILE MEMORY CELL, NONVOLATILE MEMORY CELL ARRAY, AND NONVOLATILE MEMORY

PROBLEM TO BE SOLVED: To provide a nonvolatile memory capable of preventing a writing error without causing wasted power consumption due to unnecessary charge of a bit line.SOLUTION: A nonvolatile memory cell includes resistance change type elements R1 and R2 interposed in series between a bit line BL and an inversion bit line BLB, and a selection transistor T1 where the resistance change type elements R1 and R2 are interposed between a commonly connected common node and a source line and ON/OFF switching is performed by selection voltage applied via a word line WL. The selection transistor is turned on by applying a voltage of a polarity corresponding to written data between the source line SL and a set of the bit line BL and the inversion bit line BLB of the nonvolatile memory cell as an access object. Thus, the resistance change type element R1 can be set at high resistance and the resistance change type element R2 can be set at low resistance, and vice verse.