SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To reduce a breadth of the whole device without deterioration in radiation performance and equalize characteristics of transistors.SOLUTION: A semiconductor device comprises: a semiconductor substrate 1 composed of a hexagonal crystal such as 4H-SiC, 6H-SiC, GaN, sapphire, ZnO, AlN and BeO; transistors 2, 3 provided on a c-plane of the semiconductor substrate 1; and source electrodes 4, drain electrodes 5 and gate electrodes 6 of the transistors 2, 3, which are connected with each other, respectively. An angle between the gate electrodes 6 of the transistors 2, 3 is 60 degrees or 120 degrees in planar view viewed from a direction perpendicular to the c-plane of the semiconductor substrate 1.