SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing the corrosion of metal wiring by dry etching for through via formation, and to provide a method of manufacturing the same.SOLUTION: A semiconductor device in which a supporting substrate 21 is bonded to an insulating layer 14 includes: a polysilicon electrode 1 connected to metal wiring M1 of a first layer via a contact C1; a through via 2 opening from a rear surface of a semiconductor substrate composed of a BOX layer (a buried oxide film) 11, a player 12, and an n-epitaxial layer 13 to the polysilicon electrode 1 through the semiconductor substrate; and a pad 3 provided on a rear surface of the semiconductor substrate and connected to the polysilicon electrode 1 by a metal 3a deposited in the through via 2.