METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which is capable of suppressing diffusion of Ni in a metal pattern containing Ni.SOLUTION: The present invention is the method of manufacturing a semiconductor device, which comprises the steps of: forming a metal pattern (Ni layer 52) having an upper surface and a side surface and containing nickel on a nitride semiconductor layer 12; and forming a barrier layer (Pd layer 54) on exposed surfaces including the upper surface and the side surface of the metal pattern (Ni layer 52) by electroless plating, thereby covering the surfaces of the metal pattern (Ni layer 52) with the barrier layer (Pd layer 54).