NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element which has good luminous efficiency and good power efficiency.SOLUTION: A nitride semiconductor light-emitting element comprises an n-type nitride semiconductor layer 9, a lower luminous layer 13, an intermediate luminous layer 14, an upper luminous layer 15 and a p-type nitride semiconductor layer 16 in this order. The lower luminous layer 13 includes a plurality of lower well layers and a plurality of lower barrier layers each having bandgap larger than that of the lower well layer, which are alternately layered. The intermediate luminous layer 14 includes at least one intermediate well layer and at least one intermediate barrier layer each having bandgap larger than that of the intermediate well layer, which are alternately layered. The upper luminous layer 15 includes a plurality of upper well layers and a plurality of upper barrier layers each having bandgap larger than that of the upper well layer, which are alternately layered. A thickness of the intermediate barrier layer is thinner than a thickness of each of the lower barrier layer and the upper barrier layer. A thickness of the intermediate well layer is thinner than a thickness of the upper well layer.