SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To prevent the occurrence of cracks on an outermost peripheral part of an element isolation trench structures arranged in an aggregated manner.SOLUTION: A semiconductor device comprises: element isolation trenches 30 formed on one principal surface of a semiconductor substrate; insulators 120 formed in the element isolation trenches 30; element formation regions 38 surrounded by the element isolation trenches 30; and semiconductor elements formed in the element formation regions 38. The element isolation trenches 30 include: an element isolation trench 363 extending in an X direction; element isolation trenches 361, 362 extending in a Y direction; and element isolation trenches 365, 366 extending in a direction inclined at an angle (0°<