SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To prevent the occurrence of cracks in trenches adjacent to element isolation trench structures arranged in an aggregated manner.SOLUTION: A semiconductor device comprises: a semiconductor substrate; first and second element isolation trenches 30, 20 formed on one principal surface of the semiconductor substrate at a distance from each other; a first insulator 120 formed in the first element isolation trench; a plurality of first element formation regions 38, 39 surrounded by the first element isolation trench; first semiconductor elements formed in the first element formation regions; a second insulator 120 formed in the second element isolation trench; second element formation regions 26 surrounded by the second element isolation trenches; second semiconductor elements formed in the second element formation regions; and stress relaxation structures 40 formed among the first element isolation trench and the second element isolation trenches.