SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device in which an increase in an off-current is small or a minus shift of a threshold voltage is small.SOLUTION: A semiconductor device includes a first conductive layer on an oxide semiconductor layer, a second conductive layer on the oxide semicond...

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Bibliographische Detailangaben
Hauptverfasser:	KISHIDA HIDEYUKI, IMAFUJI TOSHIKAZU
Format:	Patent
Sprache:	eng
Schlagworte:	ADVERTISING BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY DISPLAYING EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING LABELS OR NAME-PLATES NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS SEMICONDUCTOR DEVICES SIGNS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor device in which an increase in an off-current is small or a minus shift of a threshold voltage is small.SOLUTION: A semiconductor device includes a first conductive layer on an oxide semiconductor layer, a second conductive layer on the oxide semiconductor layer, a third conductive layer on the first conductive layer, a fourth conductive layer on the second conductive layer, and an oxide layer on the oxide semiconductor layer. The oxide layer is provided thicker than the first conductive layer and the second conductive layer.