PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS

PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS

PROBLEM TO BE SOLVED: To provide a plasma etching method and a plasma etching apparatus capable of performing selective side etching of a silicon film with respect to a silicon germanium film on a laminated film of the silicon film and the silicon germanium film.SOLUTION: A plasma etching method inc...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: EITOKU HIROFUMI, ONO TETSUO, NAKAUNE KOUICHI, ADACHI JUNJI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a plasma etching method and a plasma etching apparatus capable of performing selective side etching of a silicon film with respect to a silicon germanium film on a laminated film of the silicon film and the silicon germanium film.SOLUTION: A plasma etching method includes selective side etching of a silicon film with respect to a silicon germanium film. A partial pressure of fluorine element is 1.0 Pa or less by using at least one kind of gas containing carbon element and hydrogen element and fluorine element.