SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To improve ashing efficiency in an oxygen plasma treatment on a photoresist film on which a pattern is formed and form electrodes uniformly formed in holes of the pattern.SOLUTION: A semiconductor device manufacturing method comprises firstly performing removal by reduction on a surface of a photoresist PR and inside holes by reduction hydrogen radicals of hydrogen (H) plasma by using a H(3%)/N(97%) mixed gas, for example. Because of this, a wafer reaches a state where efficiency of subsequent Oplasma ashing can be improved. The semiconductor device manufacturing method comprises providing a surface of the photoresist PR with a hydrophilic property and removing residual in the holes by Oplasma ashing. Specifically, by alternately and continuously performing a brief Oplasma ashing treatment and a brief cooling treatment after an Hplasma treatment, temperature elevation of the wafer is inhibited. In particular, the wafer is subjected to three times of the 15-seconds Oplasma treatment and 200-seconds cooling per one wafer.