METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE OF PERIODIC TABLE GROUP 13 METAL NITRIDE

PROBLEM TO BE SOLVED: To provide a method capable of producing a periodic table group 13 metal nitride semiconductor substrate capable of forming a high quality device structure.SOLUTION: In a method for producing a periodic table group 13 metal nitride semiconductor substrate for growing a periodic...

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Hauptverfasser:	MIYAKE HIDETO, NAGAO SATORU, ENATSU YUKI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method capable of producing a periodic table group 13 metal nitride semiconductor substrate capable of forming a high quality device structure.SOLUTION: In a method for producing a periodic table group 13 metal nitride semiconductor substrate for growing a periodic table group 13 metal nitride semiconductor crystal using a periodic table group 13 metal nitride semiconductor base substrate 1 in which a crystal face of a main face 2 is a non-polar face or a semi-polar face, it is possible to produce the periodic table group 13 metal nitride semiconductor substrate capable of forming a high quality device structure by arranging grooves 3 with a depth not less than 6 μm in the main face 2 of the base substrate 1 and further advancing crystal growth such that gaps are formed between the base substrate 1 and the periodic table group 13 metal nitride semiconductor crystal.