BRAZING FILLER METAL, JOINING METHOD BY THE BRAZING FILLER METAL, AND SEMICONDUCTOR MODULE
PROBLEM TO BE SOLVED: To improve reliability of a junction part of a composite member and other member in a semiconductor module having the composite member in which aluminum or an aluminum alloy is impregnated in carbon material.SOLUTION: Brazing filler metal joins a heat transfer layer 4 (or a hea...
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Zusammenfassung: | PROBLEM TO BE SOLVED: To improve reliability of a junction part of a composite member and other member in a semiconductor module having the composite member in which aluminum or an aluminum alloy is impregnated in carbon material.SOLUTION: Brazing filler metal joins a heat transfer layer 4 (or a heat radiation substrate 6) formed of a composite member in which aluminum or an aluminum alloy is impregnated in carbon material, and an insulating substrate 5. The brazing filler metal contains 0.1-2.0 wt.% of Ti, and a mixture formed of 22-32 wt.% of Cu, 3.4-7.4 wt.% of Si, and the balance Al with inevitable impurities. The heat transfer layer 4 is arranged between a wiring layer 3, on which a semiconductor element 2 is arranged, and the insulating substrate 5. The brazing filler metal is applied on the heat transfer layer 4, the insulating substrate 5 is arranged on the applied surface of the brazing filler metal, and the heat transfer layer 4 is pressed and heated in a direction of the insulating substrate 5 to perform brazing. |
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