SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a chip area by reducing resistance RSS(on) between source electrodes.SOLUTION: A semiconductor device 10 comprises a chip 11 divided into three regions: a first region 11a, a second region 11b, and a third region 11c, and a...

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Bibliographische Detailangaben
Hauptverfasser:	SUZUKI KAZUKI, KORENARI TAKAHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a chip area by reducing resistance RSS(on) between source electrodes.SOLUTION: A semiconductor device 10 comprises a chip 11 divided into three regions: a first region 11a, a second region 11b, and a third region 11c, and a common drain electrode provided on a rear surface of the chip 11. The second region 11b is formed between the first region 11a and the third region 11c. A first MOSFET is formed in the first region 11a and in the third region 11b. A second MOSFET is formed in the second region 11c.