BLANK FOR MANUFACTURING MOLD AND METHOD FOR MANUFACTURING MOLD

PROBLEM TO BE SOLVED: To provide a novel technology that can improve etching workability by enhancing dry etching rate of a hard mask film made of a chromium-based material while ensuring hard mask function of the hard mask film.SOLUTION: A hard mask film 2 disposed on a substrate 1 is formed of a c...

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Bibliographische Detailangaben
Hauptverfasser:	FUKAYA SOICHI, NAKAGAWA HIDEO, SASAMOTO KOHEI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING APPARATUS SPECIALLY ADAPTED THEREFOR ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GLASS HOLOGRAPHY JOINING GLASS TO GLASS OR OTHER MATERIALS LIME, MAGNESIA MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS THEREFOR MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY MINERAL OR SLAG WOOL NANOTECHNOLOGY ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS REFRACTORIES SEMICONDUCTOR DEVICES SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS SLAG SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS TRANSPORTING TREATMENT OF NATURAL STONE WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a novel technology that can improve etching workability by enhancing dry etching rate of a hard mask film made of a chromium-based material while ensuring hard mask function of the hard mask film.SOLUTION: A hard mask film 2 disposed on a substrate 1 is formed of a chromium-based material containing tin. The chromium-based material containing tin constituting the hard mask film 2 has etching resistance equal or superior to that of a chromium-based material film containing no tin under fluorine-based dry etching condition, and indicates significantly higher etching rate than the chromium-based material film containing no tin under chlorine-based dry etching condition. Consequently, chlorine-based dry etching time can be reduced to decrease damage to a resist pattern, thereby achieving high precision pattern transfer.