GAS BARRIER FILM

PROBLEM TO BE SOLVED: To provide a gas barrier film high in gas barrier performance and reduced in the lowering of the gas barrier performance in a post-processing process.SOLUTION: A gas barrier film is formed by sequentially laminating the following [A] layer, [B] layer and [C] layer on at least a...

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Bibliographische Detailangaben
Hauptverfasser:	YOSHIOKA TADASHI, TSUKAMURA YUSUKE, KAMIBAYASHI HIROYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM PERFORMING OPERATIONS SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a gas barrier film high in gas barrier performance and reduced in the lowering of the gas barrier performance in a post-processing process.SOLUTION: A gas barrier film is formed by sequentially laminating the following [A] layer, [B] layer and [C] layer on at least a single face of a polymer base material. [A] layer: a first bridging resin layer whose pencil hardness is not lower than H and surface free energy is not higher than 45mN/m. [B] layer: a silicon-containing inorganic layer whose thickness is 10 to 1,000 nm. [C] layer: a second bridging resin layer whose pencil hardness is not lower than H and thickness is 0.05 to 10 μm.