SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a MOS transistor structure taking advantage of a fin structure to make it suitable for high integration and low voltage operation and a memory cell making the most of the MOS transistor.SOLUTION: In a semiconductor memory device, a memory cell is connected to the int...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TSUCHIYA RYUTA, ITO KIYOO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
Online-Zugang:	Volltext bestellen
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