METHOD FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL SUBSTRATE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a group 13 nitride crystal substrate having a good surface with small surface roughness, which is capable of efficiently performing grinding using fixed abrasive grains having a small grain diameter.SOLUTION: There is provided the method fo...

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Bibliographische Detailangaben
1. Verfasser:	KAJIMOTO TETSUJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TOOLS FOR GRINDING, BUFFING, OR SHARPENING TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for manufacturing a group 13 nitride crystal substrate having a good surface with small surface roughness, which is capable of efficiently performing grinding using fixed abrasive grains having a small grain diameter.SOLUTION: There is provided the method for manufacturing a group 13 nitride crystal substrate, which manufactures a group 13 nitride crystal substrate by grinding a group 13 nitride crystal using a grind stone in which abrasive grains having an average grain diameter of less than 1.0 μm are fixed. Stress applied to the group 13 nitride crystal in the grinding is set to 0.75 kg/cmor less.