POROUS SEMICONDUCTOR ELECTRODE, METHOD OF MANUFACTURING THE SAME, AND MANUFACTURING APPARATUS

PROBLEM TO BE SOLVED: To provide a porous semiconductor electrode, a method of manufacturing the same, and a manufacturing apparatus, capable of obtaining a porous semiconductor thin film of a constant film thickness.SOLUTION: In a method of manufacturing a porous semiconductor electrode 13 constituted by forming a thin film 12 made from porous semiconductor on a surface of a porous semiconductor substrate 11 having a small hole 11B penetrating from the rear side to the surface side, a placement stage 21 including a placement surface 23 on which the substrate 11 is placed, and a through-hole 26 for releasing gas which is formed at the placement surface 23 and which is capable of exhausting the gas facing the placement surface 23 to the outside is used, to place the substrate 11 on the placement surface 23, for tight contacting between a rear surface of the substrate 11 and the placement surface 23. Porous semiconductor particles 12A which are to be the thin film 12 are sprayed against the surface of the substrate 11 placed on the placement surface 23 by pressurizing gas G, and the pressurizing gas G that has flowed to the rear surface side through the small hole 11B of the substrate 11 is exhausted through the through-hole 26 for releasing gas.