VAPOR DEPOSITION MASK MANUFACTURING METHOD AND ORGANIC SEMICONDUCTOR ELEMENT MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To provide a method for manufacturing a vapor deposition mask, wherein high fineness and light weight can be both satisfied even if the vapor deposition mask is increased in size, and to provide an organic semiconductor element manufacturing method, by which a highly fine organ...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | NISHIMURA SUKEYUKI OBATA KATSUYA TAKEDA TOSHIHIKO |
description | PROBLEM TO BE SOLVED: To provide a method for manufacturing a vapor deposition mask, wherein high fineness and light weight can be both satisfied even if the vapor deposition mask is increased in size, and to provide an organic semiconductor element manufacturing method, by which a highly fine organic semiconductor element can be manufactured.SOLUTION: A vapor deposition mask is manufactured by: a step of preparing a resin layer-attached metal plate, which has a resin layer provided on one surface of a metal plate; a step of forming a resin layer-attached metal mask by forming slits in the metal plate of the resin layer-attached metal plate, in which the slits penetrates merely the metal plate; and a step of forming a resin mask, by radiating laser from the metal mask side after the previous step and by forming, vertically and horizontally, a plurality of rows of the openings corresponding to a pattern to be manufactured on the resin layer by vapor deposition. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2013227679A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2013227679A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2013227679A3</originalsourceid><addsrcrecordid>eNrjZEgMcwzwD1JwcQ3wD_YM8fT3U_B1DPYGEn6hbo7OIaFBnn7uCr6uIR7-LgqOfi4K_kHujn6ezgrBrr6ezv5-LqHOIUDtrj6uvq5-IVi18TCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwNDYyMjczNzS0djohQBAFi9NKU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>VAPOR DEPOSITION MASK MANUFACTURING METHOD AND ORGANIC SEMICONDUCTOR ELEMENT MANUFACTURING METHOD</title><source>esp@cenet</source><creator>NISHIMURA SUKEYUKI ; OBATA KATSUYA ; TAKEDA TOSHIHIKO</creator><creatorcontrib>NISHIMURA SUKEYUKI ; OBATA KATSUYA ; TAKEDA TOSHIHIKO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a method for manufacturing a vapor deposition mask, wherein high fineness and light weight can be both satisfied even if the vapor deposition mask is increased in size, and to provide an organic semiconductor element manufacturing method, by which a highly fine organic semiconductor element can be manufactured.SOLUTION: A vapor deposition mask is manufactured by: a step of preparing a resin layer-attached metal plate, which has a resin layer provided on one surface of a metal plate; a step of forming a resin layer-attached metal mask by forming slits in the metal plate of the resin layer-attached metal plate, in which the slits penetrates merely the metal plate; and a step of forming a resin mask, by radiating laser from the metal mask side after the previous step and by forming, vertically and horizontally, a plurality of rows of the openings corresponding to a pattern to be manufactured on the resin layer by vapor deposition.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC HEATING ; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131107&DB=EPODOC&CC=JP&NR=2013227679A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131107&DB=EPODOC&CC=JP&NR=2013227679A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NISHIMURA SUKEYUKI</creatorcontrib><creatorcontrib>OBATA KATSUYA</creatorcontrib><creatorcontrib>TAKEDA TOSHIHIKO</creatorcontrib><title>VAPOR DEPOSITION MASK MANUFACTURING METHOD AND ORGANIC SEMICONDUCTOR ELEMENT MANUFACTURING METHOD</title><description>PROBLEM TO BE SOLVED: To provide a method for manufacturing a vapor deposition mask, wherein high fineness and light weight can be both satisfied even if the vapor deposition mask is increased in size, and to provide an organic semiconductor element manufacturing method, by which a highly fine organic semiconductor element can be manufactured.SOLUTION: A vapor deposition mask is manufactured by: a step of preparing a resin layer-attached metal plate, which has a resin layer provided on one surface of a metal plate; a step of forming a resin layer-attached metal mask by forming slits in the metal plate of the resin layer-attached metal plate, in which the slits penetrates merely the metal plate; and a step of forming a resin mask, by radiating laser from the metal mask side after the previous step and by forming, vertically and horizontally, a plurality of rows of the openings corresponding to a pattern to be manufactured on the resin layer by vapor deposition.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC HEATING</subject><subject>ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEgMcwzwD1JwcQ3wD_YM8fT3U_B1DPYGEn6hbo7OIaFBnn7uCr6uIR7-LgqOfi4K_kHujn6ezgrBrr6ezv5-LqHOIUDtrj6uvq5-IVi18TCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwNDYyMjczNzS0djohQBAFi9NKU</recordid><startdate>20131107</startdate><enddate>20131107</enddate><creator>NISHIMURA SUKEYUKI</creator><creator>OBATA KATSUYA</creator><creator>TAKEDA TOSHIHIKO</creator><scope>EVB</scope></search><sort><creationdate>20131107</creationdate><title>VAPOR DEPOSITION MASK MANUFACTURING METHOD AND ORGANIC SEMICONDUCTOR ELEMENT MANUFACTURING METHOD</title><author>NISHIMURA SUKEYUKI ; OBATA KATSUYA ; TAKEDA TOSHIHIKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2013227679A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC HEATING</topic><topic>ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>NISHIMURA SUKEYUKI</creatorcontrib><creatorcontrib>OBATA KATSUYA</creatorcontrib><creatorcontrib>TAKEDA TOSHIHIKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NISHIMURA SUKEYUKI</au><au>OBATA KATSUYA</au><au>TAKEDA TOSHIHIKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>VAPOR DEPOSITION MASK MANUFACTURING METHOD AND ORGANIC SEMICONDUCTOR ELEMENT MANUFACTURING METHOD</title><date>2013-11-07</date><risdate>2013</risdate><abstract>PROBLEM TO BE SOLVED: To provide a method for manufacturing a vapor deposition mask, wherein high fineness and light weight can be both satisfied even if the vapor deposition mask is increased in size, and to provide an organic semiconductor element manufacturing method, by which a highly fine organic semiconductor element can be manufactured.SOLUTION: A vapor deposition mask is manufactured by: a step of preparing a resin layer-attached metal plate, which has a resin layer provided on one surface of a metal plate; a step of forming a resin layer-attached metal mask by forming slits in the metal plate of the resin layer-attached metal plate, in which the slits penetrates merely the metal plate; and a step of forming a resin mask, by radiating laser from the metal mask side after the previous step and by forming, vertically and horizontally, a plurality of rows of the openings corresponding to a pattern to be manufactured on the resin layer by vapor deposition.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_JP2013227679A |
source | esp@cenet |
subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | VAPOR DEPOSITION MASK MANUFACTURING METHOD AND ORGANIC SEMICONDUCTOR ELEMENT MANUFACTURING METHOD |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T04%3A03%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NISHIMURA%20SUKEYUKI&rft.date=2013-11-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2013227679A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |