METHOD FOR PRODUCING GaN FREE-STANDING SUBSTRATE

PROBLEM TO BE SOLVED: To provide a method which can produce a high-quality GaN free-standing substrate with a good yield by releasing a thick GaN film during its growth.SOLUTION: A method for producing a GaN free-standing substrate comprises a step of forming a ZnO film on a sapphire substrate so th...

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Hauptverfasser: EBIHARA MASATO, KAWAHARA MINORU
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method which can produce a high-quality GaN free-standing substrate with a good yield by releasing a thick GaN film during its growth.SOLUTION: A method for producing a GaN free-standing substrate comprises a step of forming a ZnO film on a sapphire substrate so that the value of the FWHM of XRC of (0002) of the ZnO film is 500 arcsec or less, a low-temperature growth step of forming a GaN film on the ZnO film at a temperature of 850°C or low in a manner capable of inhibiting the release of the GaN film, and then a high-temperature growth step of raising the temperature to 950°C or higher by heating and additionally forming a GaN film and simultaneously releasing the GaN film from the substrate.