SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device further downsized and provide a manufacturing method of the same.SOLUTION: A semiconductor device comprises: a semiconductor substrate 1 having first and second surfaces 1a, 1b which are opposite to each other; and first and second elements 21, 22 each of which is formed on the semiconductor substrate 1 and has an insulated gate field effect transistor part T. The first and second elements 21, 22 share a first conductivity type region on at least one of the first and second surfaces 1a, 1b. The shared first conductivity type region is either of a region serving as an emitter in both of the first and second elements 21, 22 or a region serving as a collector in both of the first and second elements 21, 22.