EUV MASK BLANKS, MASK MANUFACTURING METHOD, AND ALIGNMENT METHOD

PROBLEM TO BE SOLVED: To provide EUV mask blanks, a mask manufacturing method, and an alignment method capable of performing simple and accurate alignment.SOLUTION: Each of EUV mask blanks according to one embodiment of the present invention comprises: a substrate 11; a multilayer film 12 provided o...

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Bibliographische Detailangaben
1. Verfasser:	KUSUSE HARUHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide EUV mask blanks, a mask manufacturing method, and an alignment method capable of performing simple and accurate alignment.SOLUTION: Each of EUV mask blanks according to one embodiment of the present invention comprises: a substrate 11; a multilayer film 12 provided on the substrate 11; a spot-like dot pattern 21 formed by unevenness on a surface of the multilayer film 12; and a cross pattern 20 formed by unevenness on the surface of the multilayer film 12 and having an X-pattern 18 extending in an X-direction from a position of the dot pattern 21, and a Y-pattern extending in a Y-direction from the position of the dot pattern 21.