PLASMA PROCESSING DEVICE

PROBLEM TO BE SOLVED: To provide a plasma processing device which can reduce an impedance of a feedback circuit of a discharge current as much as possible and supply high-frequency power to plasma with high energy efficiency.SOLUTION: A plasma processing device includes: a first electrode 7 disposed oppositely to a discharge space CS of a peripheral surface part of a drum 5; second electrodes 9 which cover the drum peripheral surface part on both sides in a peripheral direction of the discharge space with a non-discharge space US left; a high frequency power source which supplies high-frequency power to the first electrode; and a matching box MB which has a matching circuit for performing impedance matching between the high frequency power source and the first electrode. The first electrode includes an electrode holder 6 which is detachably mounted on a wall surface of a vacuum chamber and holds the first electrode at a predetermined position by inserting the first electrode into a through-hole opened on the vacuum chamber. The plasma processing device further includes a conductive connection member 8 which directly connects the second electrodes to the grounding matching box when the matching box is integrally provided on a rear face in a mounting direction of the electrode holder and the electrode holder is mounted on the wall surface of the vacuum chamber.