SILICON CARBIDE DIMPLED SUBSTRATE

SILICON CARBIDE DIMPLED SUBSTRATE

PROBLEM TO BE SOLVED: To provide a dimpled substrate including a substrate of high thermal conductivity having a first main surface and a second main surface opposite the first main surface, and a method of manufacturing the dimpled substrate.SOLUTION: Active epitaxial layers 16 are formed on the fi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CENGIZ BALKAS, CEM BASCERI, HARRIS CHRISTOPHER, GOERKE THOMAS
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a dimpled substrate including a substrate of high thermal conductivity having a first main surface and a second main surface opposite the first main surface, and a method of manufacturing the dimpled substrate.SOLUTION: Active epitaxial layers 16 are formed on the first main surface 12 of the substrate 10. Dimples 22 are formed to extend from the second main surface 14 into the substrate toward the first main surface. An electrical contact 24 of low resistance material is formed on the second main surface and within the dimples. A back contact of low resistance and low loss is thus formed while maintaining the substrate as an effective heat sink.