SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit variation in voltage withstanding characteristics due to movable ions with a simple configuration.SOLUTION: A semiconductor device 10 comprises: an active region 20 where a semiconductor element is formed; a field relaxation r...

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Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit variation in voltage withstanding characteristics due to movable ions with a simple configuration.SOLUTION: A semiconductor device 10 comprises: an active region 20 where a semiconductor element is formed; a field relaxation region 50 provided on an outer peripheral region of the active region 20; and a resin film 60 which covers at least a part of the field relaxation region 50 and includes carbon material particles 60a having a hexagonal carbon network and an insulation resin 60b. Accordingly, an influence on the element caused by possible movable ions 90 and the like in the insulation resin 60b is inhibited, and variation in voltage withstanding characteristics is inhibited.