SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which efficiently forms a barrier layer on an electrode side face and which easily perform microfabrication of an electrode pattern.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a fir...

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1. Verfasser: KAWAKUBO HIROSHI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which efficiently forms a barrier layer on an electrode side face and which easily perform microfabrication of an electrode pattern.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a first metal layer 13; a process of forming a mask 14 having an opening 16 on the first metal layer 13; a process of performing dry etching on the first metal layer 13 exposed from the opening 16 of the mask 14 and adhering a part of the first metal layer 13 to a side face of the opening 16; and a process of forming a metal electrode 29 on the first metal layer 13 on a bottom face and the side face of the opening 16.