METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE AND NITRIDE SEMICONDUCTOR SUBSTRATE

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE AND NITRIDE SEMICONDUCTOR SUBSTRATE

PROBLEM TO BE SOLVED: To provide a nitride semiconductor substrate by easily reducing organic matter and abrasive grains present in cracks and/or voids while maintaining smoothness of a polished nitride semiconductor substrate material.SOLUTION: A nitride semiconductor substrate material, which has...

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Bibliographische Detailangaben
Hauptverfasser: TASHIRO MASAYUKI, OHATA TATSUHIRO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a nitride semiconductor substrate by easily reducing organic matter and abrasive grains present in cracks and/or voids while maintaining smoothness of a polished nitride semiconductor substrate material.SOLUTION: A nitride semiconductor substrate material, which has been peeled from a plate after polished by abrasive grains in a state of being fixed onto the plate by an adhesive, is heat-treated at 500-900°C, and then is cleaned by a fluorine-containing acid aqueous solution.