METHOD OF PROGRAMMING SELECTION TRANSISTORS FOR NAND FLASH MEMORY

PROBLEM TO BE SOLVED: To precisely control a threshold voltage of selection transistors for flash memory.SOLUTION: Provided is a non-volatile memory device which includes a plurality of cells, a plurality of selection transistors each having a gate and coupled to the cells, and a selection line coup...

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Bibliographische Detailangaben

Hauptverfasser:	OSAMA KHOURI, BARTOLI SIMONE
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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