METHOD OF PROGRAMMING SELECTION TRANSISTORS FOR NAND FLASH MEMORY

PROBLEM TO BE SOLVED: To precisely control a threshold voltage of selection transistors for flash memory.SOLUTION: Provided is a non-volatile memory device which includes a plurality of cells, a plurality of selection transistors each having a gate and coupled to the cells, and a selection line coupled in common to the gates of the selection transistors. Also provided is a method based on the memory device, which includes applying a first program voltage to the selection line and, when at least one of the selection transistors has not been shifted to a program condition, applying a second program voltage to the selection line.