METHOD OF MANUFACTURING THIN FILM TRANSISTOR

PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor capable of preventing an arc formation during crystallization of an amorphous silicon layer with conducting heat of a metal layer.SOLUTION: Provided is a method of manufacturing a thin film transistor comprising: a sub...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	AN SHISHU, KIM BEONG-JU, KIN SEITETSU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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